Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

锂离子电池硅氧化物负极首次库伦效率的影响因素与提升策略

硅氧化物(SiO_x, 0<x≤2)具有高的比容量和低的嵌锂电位, 且体积膨胀率显著低于纯硅负极, 因而被认为是替代传统石墨负极材料的理想选择之一. 然而SiO_x负极在首次嵌锂过程中表面形成的固体电解质界面膜(SEI)以及大量的不可逆产物, 造成其首次库伦效率偏低, 严重阻碍了SiO_x负极的实际应用. 本文从SiO_x的结构模型出发, 系统阐述了SiO_x负极的嵌锂机理以及首次库伦效率低的原因; 归纳了SiO_x负极首次库伦效率的提升策略及其研究进展; 并对提升SiO_x负极首次库伦效率的未来发展方向进行了展望.     

Low power Electro-optical filter: Constructed using silicon nanobeam resonator and PIN junction

In this paper, a high tunable Electro-optical filter is designed and simulated with low electric power consumption. A silicon nanobeam resonator based on one-dimensional photonic crystal in the form of Fabry–Perot structure, silicon-on-insulator waveguide, is proposed with a PIN junction. In designing nanobeam resonator, “deterministic design method” is used to achieve the high quality factor and high-transmission rate. Tuning of the resonant wavelength in the output channel of the filter is achieved by manipulating the refractive index of the active area by using the free-carrier dispersion effect. The output wavelengths of designed device can be tuned for the telecom-friendly 1.55 µm range. The device shows a wavelength shift higher than 3 nm for a power consumption of only 0.9 mW. Finally, the simulation results show that the provided device can be considered as a narrowband and tunable Electro-optical filter that is suitable for DWDM communication system.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

C–F Bond Cleavage Reactions with Beryllium,Magnesium, Gallium,Hafnium, and Thorium Halides

The work describes unexpected stoichiometric C–F bond cleavage reactions of beryllium, magnesium, gallium, hafnium and thorium halides with α,α,α-trifluorotoluene. The reaction of BeBr₂ / GaBr₃ or MgBr₂ / GaBr₃ mixtures as well as neat GaI₃ with α,α,α-trifluorotoluene in the presence of (OSi₂Me₄)₂ ( I ) yields the carbenium ion containing compounds [Ph-C(O₂Si₂Me₄)][GaX₄] (X = Br: 1 , X = I/F: 2 ). Both compounds were successfully characterized and a defluorination type reaction under incorporation of a siloxy unit was observed. Compound 1 was also characterized by single-crystal X-ray diffraction analysis. The conversion of α,α,α-trifluorotoluene with BeI₂, HfI₄ or ThI₄ turned out to be a halodefluorination-type reaction with formation of α,α,α-triiodotoluene ( 3 ). An adequate NMR spectroscopic and the X-ray crystallographic characterization of 3 were performed for the first time.     

Metrological orientation-confirmation of Si(h h k) using scanning tunneling microscopy

For the periodicity-modulation of the Si(h h k) template between (0 0 1) and (1 1 1), it is necessary to prepare the surface with any orientation within this range, most especially for fabricating useful one-dimensional nanostructures. Especially, when there are no strong X-ray signals using the standard Cu K-α source in the vicinity of any arbitrarily chosen (H H K), it turns out that the line-profile analysis on the topographic image of scanning tunneling microscopy can be a unique way for confirming the orientation of the prepared surface. Though there are a number of small-width facets on the reconstructed surface, if any of well-defined facets, such as (1 1 1), (3 3 7), (1 1 2), and (3 3 5), are included in these facets it is possible to determine the orientation using the weighted-average method.     

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO₂ system is important.     

Core-level photoelectron study of indium chains on Si(1 1 1) at 10 K

High-resolution core-level data from the prototypical In/Si(1 1 1) system have been acquired at 10 K. An asymmetric tail in the In 4d spectra reveals a metallic character of the low temperature Si(1 1 1)8 × 2 phase confined to the inner indium rows. The decoupling of the one-dimensional inner indium chains from any metallic environment at ∼10 K suggests a possible Luttinger liquid behavior. At room temperature essentially a broadening of the spectral features is noticed, which appears compatible with a fluctuation scenario.     

Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface

The step configuration of a vicinal Si surface is studied under electromigration and a gradient of temperature. An abrupt transition (ΔT = 4 °C) from step-meandering to step bunching is found at 1225 °C for a step-down direct-current direction. This transition starts by random fluctuations which then extend on the whole surface. The transition is studied in the framework of a linear stability analysis of the usual Burton-Cabrera-Frank model by comparing the amplification factors of step-meandering and step bunching instabilities. Both compete at a given temperature, but since the amplification factors behave differently with temperature, bunching abruptly supersedes meandering above a critical temperature.     

The role of carbon impurities on the Si(0 0 1)-c(4 × 4) surface reconstruction: Theoretical calculations

In this work we employ the state-of-the-art pseudopotential method, within a generalized gradient approximation to the density functional theory, combined with a recently developed method for the calculation of HREELS spectra to study a series of different proposed models for carbon incorporation on the silicon (0 0 1) surface. A fully discussion on the geometry, energetics and specially the comparison between experimental and theoretical STM images and electron energy loss spectra indicate that the Si(1 0 0)-c(4 × 4) is probably induced by Si-C surface dimers, in agreement with recent experimental findings.